发明名称 |
TECHNIQUE TO DEPOSIT SIDEWALL PASSIVATION FOR HIGH ASPECT RATIO CYLINDER ETCH |
摘要 |
Various embodiments of the present invention relate to methods, apparatus and systems for forming a recessed feature in dielectric material on a semiconductor substrate. Separate etching and deposition operations are employed in a cyclic manner. Each etching operation partially etches the feature. Each deposition operation forms a protective coating on the sidewalls of the feature to prevent a lateral etching of the dielectric material during the etching operations. The protective coating may be deposited using methods that result in formation of the protective coating along substantially the entire length of the sidewalls. The protective coating may be deposited using particular reactants and/or reaction mechanisms that result in substantially complete sidewall coating at relatively low temperatures without the use of plasma. In some cases, the protective coating is deposited using molecular layer deposition techniques. |
申请公布号 |
KR20160067741(A) |
申请公布日期 |
2016.06.14 |
申请号 |
KR20150169263 |
申请日期 |
2015.11.30 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
HUDSON ERIC A.;HAUSMANN DENNIS M.;BRIGGS JOSEPH SCOTT |
分类号 |
H01L21/56;H01L21/02;H01L21/311;H01L21/3213;H01L21/762 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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