发明名称 Bidirectional two-base bipolar junction transistor operation, circuits, and systems with double base short at initial turn-off
摘要 Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.
申请公布号 US9374085(B2) 申请公布日期 2016.06.21
申请号 US201514934062 申请日期 2015.11.05
申请人 Ideal Power Inc. 发明人 Alexander William C.;Blanchard Richard A.
分类号 H03K17/66;H02M3/158;H01L29/739;H01L29/08;H01L29/16;H01L29/737;H02M1/088;H02M7/797;H03K3/012;H03K17/687;H01L29/06;H01L29/10;H01L29/73;H02M11/00;H01L29/732;H03K17/60;H01L29/417;H01L29/423 主分类号 H03K17/66
代理机构 Groover & Associates PLLC 代理人 Groover & Associates PLLC ;Groover Gwendolyn;Groover Robert
主权项 1. A method for switching a power bipolar semiconductor device which includes both first-conductivity-type emitter/collector regions and also second-conductivity-type base contact regions on both opposed surfaces of a semiconductor die, and which has an ON state and an OFF state, comprising the actions of: beginning turn-off by temporarily connecting the base contact and emitter/collector regions on the first surface together, while separately connecting the base contact and emitter/collector regions on the second surface together, without connecting the base contact region on the first surface to the base contact region on the second surface, except through the semiconductor die itself; and then floating one, but not both, of the base contact regions.
地址 Austin TX US