| 发明名称 | Dual stage carrier-aggregation (CA) low noise amplifier (LNA) having harmonic rejection and high linearity | ||
| 摘要 | A device includes a load circuit configured to receive an amplified communication signal, the load circuit having a center tapped inductor structure configured to divide the amplified communication signal into a first portion and a second portion, the load circuit configured to resonate at a harmonic of the amplified communication signal. | ||
| 申请公布号 | US9374043(B2) | 申请公布日期 | 2016.06.21 |
| 申请号 | US201414292216 | 申请日期 | 2014.05.30 |
| 申请人 | Qualcomm Incorporated | 发明人 | Wang Chuan;Pan Dongling;Tang Yiwu;van Zalinge Klaas;Hassan Muhammad |
| 分类号 | H03F3/191;H03F1/26;H03F3/19;H04B1/40;H03F1/22;H03F1/32;H03F1/56;H03F3/193;H03F3/24 | 主分类号 | H03F3/191 |
| 代理机构 | Smith Risley Tempel Blaha LLC | 代理人 | Smith Risley Tempel Blaha LLC |
| 主权项 | 1. A device, comprising: a load circuit configured to receive an amplified communication signal, the load circuit having a center tapped inductor structure configured to divide the amplified communication signal into a first portion and a second portion, the load circuit configured to resonate at a harmonic of the amplified communication signal; and a two-stage low noise amplifier (LNA) comprising a first LNA stage and a second LNA stage, the first LNA stage configured to generate the amplified communication signal to the load circuit, the load circuit configured to apply the first portion of the amplified communication signal to at least two amplifiers in the second LNA stage. | ||
| 地址 | San Diego CA US | ||