| 摘要 |
The driving circuit has a semiconductor device which is operated in breakdown in response to exceedance of collector-emitter voltage of a power semiconductor switch (S). An output section of the semiconductor device is connected through a conductive interconnect (100) to a terminal (300) between the resistors (RVCE2,RVCE3) of a resistor series circuit. The breakdown voltage of the semiconductor device is selected, such that potential at the output of the semiconductor device is greater than potential at a gate of the power semiconductor switch. An independent claim is included for method for driving power semiconductor switch. |
