| 摘要 |
A photoelectric conversion device includes a film that covers the photoelectric conversion part and a transfer gate electrode, wherein a first region having a refractive index lower than refractive indices of the film and the photoelectric conversion part, is provided between the film and the photoelectric conversion part, and a second region having a refractive index lower than the refractive indices of the transfer gate electrode and the film, is provided between the film and the top surface of the transfer gate electrode, and wherein T1<T2<λ/2−T1 is satisfied, where an optical thickness of the first region is T1, an optical thickness of the second region is T2, and a wavelength of a light incident on the photoelectric conversion part is λ. |
