| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method which has economic efficiency and a small influence on a global environment, and enables the achievement of a requisite performance.SOLUTION: A dry etching method comprises: the step of anisotropically etching at least one kind of silicon-based material selected from a group consisting of silicon dioxide and silicon nitride with a high aspect ratio, in which (A) 3,3,3-trifluoropropyne and (E) at least one kind of gas selected from a group consisting of O, CO, COF, CF, CF, CF, F, Cland NFare used; the proportions of the volume flow rates of (A) and (E) are made 5-95%:5-94% (where the total of proportions of volume flow rates of the respective gases is 100). |
