| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having high resistance against ESD (Electrostatic Discharge).SOLUTION: A semiconductor device according to an embodiment comprises: a first conductivity type first semiconductor region; a second conductivity type second semiconductor region adjacent to the first semiconductor region; a first conductivity type third semiconductor region which is adjacent to the second semiconductor region and spaced from the first semiconductor region; a first insulation film provided on the second semiconductor region and between the first semiconductor region and the third semiconductor region; a first electrode provided on the first insulation film; a high-pass filter connected between the first semiconductor region and the third semiconductor region; and a low-pass filter connected between the second semiconductor region and the third semiconductor region.SELECTED DRAWING: Figure 1 |
