发明名称 |
On-chip power converter circuit and on-chip power supply using the power converter circuit |
摘要 |
An on-chip power converter and an on-chip switching power supply implemented using a film bulk acoustic resonator (FBAR) in place of an inductor. This MEMS device offers high inductance density and high Q factor. FBARs can be conveniently fabricated in a CMOS compatible process. FBARs also shows better EMI results than conventional inductors. |
申请公布号 |
US9450518(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201313801645 |
申请日期 |
2013.03.13 |
申请人 |
University of Utah Research Foundation |
发明人 |
Khan Faisal;Imtiaz Abusaleh |
分类号 |
H02M3/335;H03H9/00;H02M7/538;H03H9/17;H02M7/48 |
主分类号 |
H02M3/335 |
代理机构 |
Michael Best & Friedrich LLP |
代理人 |
Michael Best & Friedrich LLP |
主权项 |
1. An on-chip power converter circuit receiving a direct current (DC) voltage from a power supply and providing a switched power to a load, the converter circuit comprising:
a substrate; one or more switches fabricated on the substrate, connectable to the power supply to receive the DC voltage, and being controllable to provide a variable voltage with a frequency; a film bulk acoustic resonator (FBAR) fabricated on the substrate, coupled to the one or more switches, operable to receive the variable voltage, and provide the switched power near a resonant frequency of the FBAR, the resonant frequency being less than 100M Hz; wherein the FBAR includes a length-extension mode of vibration that is based on a length of the FBAR, and wherein the resonant frequency of the FBAR is substantially defined by the length of the FBAR. |
地址 |
Salt Lake City UT US |