发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREFOR
摘要 Disclosed are a semiconductor device and a method for manufacturing the same. According to an embodiment, the semiconductor comprises: a substrate; a plurality of thin films formed on the substrate and having a circuit pattern formed thereon; and an insulating layer for insulating the plurality of thin film layers from each other. The plurality of thin film layers are connected through a via pad including a via. The upper part and the lower part of the via pad individually have a protruding pattern, and at least two among the plurality of thin film layers are connected through a stacked via structure.
申请公布号 KR20160110588(A) 申请公布日期 2016.09.22
申请号 KR20150032418 申请日期 2015.03.09
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 CHUNG, DOO YUN;CHOI, YONG SEOK;LEE, DAE HYEONG;JOO, SEUL KI;MA, WON CHUL
分类号 H01L21/768;H01L21/31;H01L21/48;H01L21/66 主分类号 H01L21/768
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