| 摘要 |
A method for fabricating a semiconductor device is provided to make silicon of a gate electrode and a semiconductor substrate react with a titanium barrier layer by forming a via hole and a trench in an insulation layer by a dual damascene process and by sequentially forming a titanium barrier layer and a tungsten barrier on the inner wall of the via hole and the trench so that an annealing process is carried out. A gate electrode(71) is formed on a semiconductor substrate(100). An insulation layer(110) is formed on the semiconductor substrate and the gate electrode, having a via hole(111,113,115) connected to the semiconductor substrate or the gate and a trench(112,114,116) connected to the via hole. A titanium barrier layer is formed on the inner wall of the via hole and the trench. A tungsten barrier layer is formed on the titanium barrier layer. An annealing process is performed on the semiconductor substrate so that the titanium barrier layer reacts with the tungsten barrier layer to form TiW. The via hole and the trench are filled with a metal interconnection. |
