Semiconductor device

摘要

Disclosed is a semiconductor device in which a resistance component resulting from wiring is reduced. A plurality of transistor units are arranged side by side in a first direction (Y direction in the view), each of which has a plurality of transistors. The gate electrodes of the transistors extend in the first direction. First source wiring extends between first transistor unit and second transistor unit, and first drain wiring extends between the second transistor unit and third transistor unit. Second drain wiring extends on the side of the first transistor unit opposite to the side where the first source wiring extends, and second source wiring extends on the side of the third transistor unit opposite to the side where the second drain wiring extends.

主权项

1. A semiconductor device comprising:
a plurality of transistor units including adjacent first, second and third transistor units arranged side by side in a first direction, each transistor unit having a plurality of transistors that are coupled to each other along a second direction intersecting the first direction; a source wiring shared by adjacent first and second transistor units, the source wiring being coupled to each transistor in the adjacent first and second transistor units; a drain wiring shared by adjacent second and third transistor units, the drain wiring being coupled to each transistor in the adjacent second and third transistor units; a source pad electrode extending in the second direction and overlapping a portion of the source wiring via an insulating film, the source pad electrode being coupled to the source wiring; and a drain pad electrode extending in the second direction and overlapping a portion of the drain wiring via an insulating film, the drain pad electrode being coupled to the drain wiring; wherein: the source pad electrode and the drain pad electrode are arranged side by side in the first direction and do not overlap each other.