Method and apparatus for faster determination of a cell state of a resistive memory cell using a parallel resistor

摘要

A device for determining an actual cell state of a resistive memory cell having a plurality M of programmable cell states comprising a sensing circuit, a settling circuit, a prebiasing circuit, and a resistor coupled in parallel to the resistive memory cell, wherein the resistor is configured to reduce an effective resistance seen by the prebiasing circuit. The sensing circuit is configured to sense a sensing voltage of the resistive memory cell and output a resultant value in response to the sensing voltage which is indicative for the actual cell state. The settling circuit is configured to settle the sensing voltage to a certain target voltage representing one of the M programmable cell states. The prebiasing circuit is configured to prebiase a bitline capacitance of the resistive memory cell such the sensing voltage is close to the certain target voltage.

主权项

1. A method for determining an actual cell state of a resistive memory cell having a plurality of programmable cell states, the method comprising:
providing a prebiasing circuit; coupling a resistor in parallel to the resistive memory cell such that the resistor is configured to reduce an effective resistance seen by the prebiasing circuit; prebiasing a bitline capacitance of the resistive memory cell by the prebiasing circuit such that a sensing voltage of the resistive memory cell is close to a certain target voltage which is indicative of the actual cell state; settling the sensing voltage to the certain target voltage; sensing the sensing voltage of the resistive memory cell; and outputting a resultant value in response to the sensing voltage.