CMOS analog memories utilizing ferroelectric capacitors

摘要

A memory cell and memories constructed from that memory cell are disclosed. A memory according to the present invention includes a ferroelectric capacitor, a charge source and a read circuit. The charge source receives a data value to be stored in the ferroelectric capacitor. The charge source converts the data value to a remanent charge to be stored in the ferroelectric capacitor and causes that remanent charge to be stored in the ferroelectric capacitor. The read circuit determines a charge stored in the ferroelectric capacitor. The data value has more than three distinct possible states, and the determined charge has more than three determined values. The memory also includes a reset circuit that causes the ferroelectric capacitor to enter a predetermined known reference state of polarization.

主权项

1. A memory comprising:
a ferroelectric capacitor; a charge source that receives a data value to be stored in said ferroelectric capacitor, said charge source converting said data value to a remanent charge to be stored in said ferroelectric capacitor and causing that remanent charge to be stored in said ferroelectric capacitor; a reset circuit that causes said ferroelectric capacitor to enter a predetermined known reference state of polarization; and a read circuit that determines a charge stored in said ferroelectric capacitor, wherein said data value has more than three distinct possible states and wherein said determined charge has more than three determined values.