发明名称 半導体装置
摘要 To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.
申请公布号 JP6031567(B2) 申请公布日期 2016.11.24
申请号 JP20150151050 申请日期 2015.07.30
申请人 株式会社半導体エネルギー研究所 发明人 加藤 清;小山 潤
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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