Heterogeneous integrated circuits and devices thereof with a surrogate substrate and transferred semiconductor devices

摘要

A heterogeneous integrated circuit and method of making the same. An integrated circuit includes a surrogate substrate including a material selected from the group consisting of Group II, Group III, Group IV, Group V, and Group VI materials and their combinations; at least one active semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials; and at least one transferred semiconductor device including a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials. The at least one active semiconductor device and the at least one transferred device are interconnected.

主权项

1. An integrated circuit comprising:
a surrogate substrate comprising a material selected from the group consisting of Group II, Group III, Group IV, Group V, Group VI materials and their combinations; at least one epitaxially grown semiconductor device epitaxially grown from a topmost planar surface of the surrogate substrate and comprising a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials; and at least one transferred semiconductor device transferred onto the topmost planar surface of the surrogate substrate, not epitaxially grown from the surrogate substrate and comprising a material combination selected from the group consisting of Group IV-IV, Group III-V and Group II-VI materials, wherein the at least one epitaxially grown semiconductor device and the at least one transferred device are interconnected on the surrogate substrate.