Method for fabricating semiconductor device having through silicon via

摘要

A semiconductor device includes a semiconductor substrate configured to include a circuit pattern at one surface, an insulation film formed over a back surface of the semiconductor substrate, a through silicon via (TSV) configured to pass through the semiconductor substrate and the insulation film, and an oxide film formed at a sidewall of the TSV and protruded from the back surface of the semiconductor substrate in a manner that the oxide film partially contacts the insulation film.

主权项

1. A method for forming a semiconductor device, the method comprising:
forming a through silicon via (TSV) that is surrounded by an oxide film and passes through a semiconductor substrate, the semiconductor substrate including a circuit pattern formed at a front side of the semiconductor substrate; exposing a top portion and an upper sidewall of the oxide film over the TSV by etching a portion of a back side of the semiconductor substrate; forming a mask film over the etched semiconductor substrate; etching the top portion and a part of the upper sidewall of the oxide film using the mask film as a mask; removing the mask film so that a back surface of the etched semiconductor substrate is exposed and the etched oxide film protrudes from the back surface of the etched semiconductor substrate; and forming an insulation film over the etched semiconductor substrate and the etched oxide film.