发明名称 |
Multiple directed self-assembly patterning process |
摘要 |
Disclosed is a method of forming a target pattern for a semiconductor device using multiple directed self-assembly (DSA) patterning processes. The method includes receiving a substrate and forming a guide pattern over the substrate by performing a process that includes a first DSA process. The method further includes performing a second DSA process over the substrate using the guide pattern. In an embodiment, the first DSA process controls the first pitch of a dense pattern in a first direction and the second DSA process controls the second pitch of the dense pattern in a second direction. |
申请公布号 |
US9530660(B2) |
申请公布日期 |
2016.12.27 |
申请号 |
US201514713207 |
申请日期 |
2015.05.15 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tseng Chin-Yuan;Hung Chi-Cheng;Chen Chun-Kuang;Lo Kuan-Hsin;Liu Ru-Gun;Gau Tsai-Sheng;Lin Wei-Liang |
分类号 |
H01L21/44;H01L21/8228;G03G5/00;H01L21/308;H01L21/768 |
主分类号 |
H01L21/44 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method of forming a target pattern for a semiconductor device, comprising:
receiving a substrate; forming a guide pattern over the substrate by performing a process that includes a first directed self-assembly (DSA) process, wherein the first DSA process results in a first copolymer layer over the substrate, the first copolymer layer includes a first constituent polymer and a second constituent polymer, and the guide pattern corresponds to the first constituent polymer; and performing a second DSA process over the substrate using the guide pattern. |
地址 |
Hsin-Chu TW |