METHOD FOR FABRICATING TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a transistor of a semiconductor device is provided to restrain the attack due to the misalignment between a gate line and a recess portion, to secure easily an effective channel length enough and to improve refresh characteristics. An isolation layer(11) is formed on a silicon substrate(10) with a predetermined lower structure to define an active region. A flat recess(17) is formed on the resultant structure by etching partially the substrate of the active region. The flat recess has a larger bottom CD(Critical Dimension) than that of an upper portion. A gate oxide layer and a metal film are sequentially formed in the recess to form a gate pattern.