发明名称 VACUUM CHUCK FOR HOLDING SI WAFER
摘要 <p>PROBLEM TO BE SOLVED: To highly precisely maintain the flatness of an attraction face for holding a wafer for a long term, by providing the main component of aluminum nitride and providing Vickers hardness within the range of a specified value for a vacuum chuck main body which is brought into contact with an Si wafer. SOLUTION: The Si wafer holding vacuum chuck has AlN whose thermal conductivity is satisfactory as a main component and has Vickers hardness in the range of 800-1500. A vacuum chuck main body 11 is formed by an AlN sintered body. A rim 15 being a circular projection is formed along a circumference on the vacuum chuck main body 11. A pressure reduction room 16 and plural projections 12 having small upper faces are formed on an inner side surrounded by a rim 15. A through hole 14 for a reduced pressure exhaust is formed in the vacuum chuck main body 11, and a nipple 17 is installed for the exhaust hole end part of the through hole 14.</p>
申请公布号 JPH10144776(A) 申请公布日期 1998.05.29
申请号 JP19960301599 申请日期 1996.11.13
申请人 SUMITOMO METAL IND LTD 发明人 TERAO KOICHI;YOSHITOMI YASUKI
分类号 H01L21/683;H01L21/68;(IPC1-7):H01L21/68 主分类号 H01L21/683
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