| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-performance highly integrated semiconductor device in which bulk type FETs (insulated gate transistor) and TFTs(thin film transistors) are three-dimensionally integrated. SOLUTION: In a semiconductor device, a first CMOS circuit composed of pinning FETs 11 and 12 and an insulating layer 3 covering the CMOS circuit are formed on a semiconductor substrate 1 and a second CMOS circuit composed of TFTs 21 and 22 is formed on the insulating layer 3. To the active areas 15 and 18 of the pinning FETs 11 and 12, an impurity having a conductivity opposite to that of the substrate 1 is added in the states of stripes extended to a drain area from a source area. The impurity areas deter the expansion of a depletion layer associated from a short-channel effect. In addition, the differences in characteristics, such as the mobility, etc., between the FETs and TFTs are reduced by improving the mobility by using crystallized semiconductor films in which crystal grain boundaries are continuously formed for the island-like areas of the TFTs 21 and 22. |
