| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which suppresses the change in the resistance of a resistant wiring and prevents the change of the performance of a transistor. <P>SOLUTION: A gate electrode 6 and the resistant wiring 7 are formed on a board 1, respectively, and an impurity ion is injected into the board 1 to form respective source areas and drain areas (diffusion layers) 1A, 1B under the part of the surface of the board 1 that correspond to both sides of the gate electrode 6. The impurity ion is further injected into the board to adjust the resistance of the resist wiring 7. Then a sidewall film 9 is formed to cover the resist wiring 7. Afterward, the board is subjected to heat treatment to activate each source area and drain area (diffusion area) 1A, 1B. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
