发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a heat radiation structure capable of radiating heat directly from itself and to provide a manufacturing method thereof. <P>SOLUTION: An uneven part in an irregular shape and spherical projection parts or a metal film which is a sort of gold black and has superior radiation property is formed on the surface of a semiconductor substrate in order to radiate the heat generated by a semiconductor element on the semiconductor substrate from the surface of the semiconductor substrate. A heat radiation structure like this radiates heat from the heat radiation structure itself, so heat radiation efficiency can be improved. The uneven part etc., can be formed by etching the semiconductor substrate. The metal film can be formed by vapor deposition etc. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004363547(A) 申请公布日期 2004.12.24
申请号 JP20030401121 申请日期 2003.12.01
申请人 NEW JAPAN RADIO CO LTD 发明人 DEGUCHI TADAYOSHI;YOSHIDA TAKASHI;TAGUCHI HIROHISA;KIMURA CHIKAO
分类号 H01L23/34;(IPC1-7):H01L23/34 主分类号 H01L23/34
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