METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE, SILICON CARBIDE EPITAXIAL WAFER AND THIN FILM EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for producing an SiC single crystal ingot where a ä0001} face wafer having little micro pipe and dislocation defects, good quality and a large diameter can be produced with excellent reproducibility and at a low cost. SOLUTION: The silicon carbide single crystal ingot is produced by a method wherein a silicon carbide single crystal ingot is grown by using a seed crystal to grow a silicon carbide single crystal having a slope face which inclines 20°or larger and less than 90°from the ä0001} face on a growing face, that the seed crystal to grow the silicon carbide single crystal having the slope face which inclines 20°or larger and less than 90°from the ä0001} face on the growing face is cut again from the grown silicon carbide single crystal ingot and that the growth of the silicon carbide single crystal is repeated a plurality of times. The angle difference between the inclination direction of the slope face of the seed crystal used in the (n-1)th growing step and that used in the (n)th growing step in the ä0001} face is 45°or larger and 135°or smaller. COPYRIGHT: (C)2006,JPO&NCIPI