发明名称 ZnO NANO CHIP ELECTRODE ELECTROLUMINESCENT ELEMENT ON SILICON SUBSTRATE, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a ZnO nano-chip electroluminescent element formed on silicon (Si) substrate, and to provide its manufacturing method. SOLUTION: The manufacturing method comprises a process 1502 of forming a Si substrate, a process 1504 of forming a lower part contact part for covering the Si substrate, a process 1506 of forming a seed layer to cover the lower part contact part, a process 1508 of forming a ZnO nanochip having a head covering the seed layer, a process 1510 of forming an insulating film to cover the ZnO nanochip, a process 1512 of etching the insulating film, a process 1514 of exposing the head of the ZnO nanochip, and a process 1516 of forming a transparent electrode that covers the exposed head of the ZnO nanochip. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007103350(A) 申请公布日期 2007.04.19
申请号 JP20060231000 申请日期 2006.08.28
申请人 SHARP CORP 发明人 CONLEY JOHN F JR;YOSHI ONO
分类号 H05B33/10;H05B33/02;H05B33/14;H05B33/28 主分类号 H05B33/10
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