发明名称 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To suppress a variation of pattern size small when changing an exposure amount. <P>SOLUTION: A resin component (A) contains a macromolecule compound (A1) containing a constituent unit (a1) having an acetal protection group, a constituent unit (a2) derived from acrylic ester including a lactone-containing ring group, and a constituent unit (a3) derived from acrylic ester containing a polar-group-containing aliphatic hydrocarbon group. An acid forming agent component (B) is a positive resist composition containing an onium salt-based acid forming agent (B1) having a cation part expressed by general formula (b-1) and a resist pattern forming method using it is provided. [In the formula, R<SP>11</SP>independently denotes an alkyl group, an alkoxy group, a halogen atom or a hydroxyl group, R<SP>12</SP>-R<SP>13</SP>may independently denote, an aryl group or an alkyl group which may include a substituent group, and n' denotes an integer of 0 or 1 to 3]. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006322989(A) 申请公布日期 2006.11.30
申请号 JP20050143969 申请日期 2005.05.17
申请人 TOKYO OHKA KOGYO CO LTD 发明人 KINOSHITA YOHEI;OKUBO KAZUYOSHI;NAKAGAWA YUSUKE;HIDESAKA SHINICHI;IRIE MAKIKO
分类号 G03F7/039;C08F220/28;G03F7/004;H01L21/027 主分类号 G03F7/039
代理机构 代理人
主权项
地址