发明名称 SEMICONDUCTOR DEVICE HAVING A PASSIVE DEVICE
摘要 The present invention relates to a semiconductor device having a passive device. The semiconductor device includes a substrate and at least one passive device. The substrate has at least one via. The via has at least two conductive elements therein. The conductive elements are not electrically connected to each other. The passive device has at least two electrodes, and is disposed on the substrate. The electrodes are electrically connected to the conductive elements respectively. The passive device needs only one via, so the amount of vias can be reduced effectively. In addition, the conductive path formed by the conductive elements and the passive device is relatively short, so that the inductance is lowered and the electrical performance is raised.
申请公布号 US2008093702(A1) 申请公布日期 2008.04.24
申请号 US20070848251 申请日期 2007.08.31
申请人 ADVANCED SEMICONDUCTOR ENGINEERING, INC. 发明人 CHENG HUNG-HSIANG;WU SUNG-MAO
分类号 H01L29/00 主分类号 H01L29/00
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