| 摘要 |
<p>A semiconductor device and a manufacturing method thereof are provided to reduce a thin film transistor area by arranging the thin film transistors having a multi-gate structure in a pixel part. A semiconductor layer(103) comprises a source region, a drain region, a first and second channel forming regions formed among the source region and the drain region, and an intermediate impurity region formed between the first and the second channel forming regions. A gate insulating layer(104) is formed on the semiconductor layer. A gate electrode includes a first conductive layer(105a), a second conductive layer(106b) which comes in contact with the first conductive layer, and a third conductive layer(106c) which comes in contact with the first conductive layer on the gate insulating layer. The first conductive layer is overlapped with at least the first channel forming region, the intermediate impurity region, and the second channel forming region. The second conductive layer is overlapped with the first channel forming region. The third conductive layer is formed apart from the second conductive layer, and is overlapped with the second channel forming region.</p> |
