发明名称 Backside protection film, method of forming the same and method of manufacturing a semiconductor package using the same
摘要 A method of forming a backside protection film includes forming a first coating layer on a first heterogeneous film, the first coating layer being at a C-stage state, forming a second coating layer on a second heterogeneous film, the second coating layer being at a B-stage state, separating the first coating layer from the first heterogeneous film, and attaching the first coating layer to the second coating layer, the second coating layer being between the second heterogeneous film and the first coating layer, and each of the first and second heterogeneous films being formed by coating a first material layer with a second material.
申请公布号 US2009155984(A1) 申请公布日期 2009.06.18
申请号 US20080314361 申请日期 2008.12.09
申请人 KIM WON-KEUN;LEE YONG-KWAN 发明人 KIM WON-KEUN;LEE YONG-KWAN
分类号 H01L21/77;H01L21/00 主分类号 H01L21/77
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