FIELD-EFFECT TRANSISTOR INCLUDING LOCALIZED HALO ION REGIONS, AND SEMICONDUCTOR MEMORY, MEMORY CARD, AND SYSTEM INCLUDING THE SAME

摘要

A field-effect transistor including localized halo ion regions that can optimize HEIP characteristics and GIDL characteristics. The field-effect transistor includes a substrate, an active region, a gate structure, and halo ion regions. The active region includes source/drain regions and a channel region formed at a partial region in the substrate. The gate structure electrically contacts the active region. The halo ion regions are locally formed adjacent to both end portions of the source/drain regions in the substrate.