发明名称 |
GATE STACK STRUCTURE WITH OXYGEN GETTERING LAYER |
摘要 |
A transistor has a channel region in a substrate and source and drain regions in the substrate on opposite sides of the channel region. A gate stack is formed on the substrate above the channel region. This gate stack comprises an interface layer contacting the channel region of the substrate, and a high-k dielectric layer (having a dielectric constant above 4.0) contacting (on) the interface layer. A Nitrogen rich first metal Nitride layer contacts (is on) the dielectric layer, and a metal rich second metal Nitride layer contacts (is on) the first metal Nitride layer. Finally, a Polysilicon cap contacts (is on) the second metal Nitride layer.
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申请公布号 |
US2009152651(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20070958595 |
申请日期 |
2007.12.18 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;AMD |
发明人 |
BU HUIMING;CARTER RICK;CHUDZIK MICHAEL P.;GRAVES TROY L.;GRIBELYUK MICHAEL A.;JHA RASHMI;NARAYANAN VIJAY;PARK DAE-GYU;PARUCHURI VAMSI K.;YAN HONGWEN;DORIS BRUCE B.;WONG KEITH KWONG HON |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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