| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of forming a favorable ohmic electrode without performing an alloying process on a surface of a compound semiconductor layer such as GaAs.SOLUTION: A semiconductor device manufacturing method comprises the steps of: epitaxially growing on a first conductivity type sacrificial layer 2, a compound semiconductor layer 3 added with an impurity of a second conductivity type opposite to the first conductivity type; removing the sacrificial layer 2 to expose a surface of the compound semiconductor layer 3; and forming an electrode 9 on the surface of the exposed compound semiconductor layer 3 without performing an alloying process. The compound semiconductor layer 3 is lattice-matched with the sacrificial layer 2. A concentration of the second conductivity type impurity added to the compound semiconductor layer 3 is equal to or larger than 1E20 cm.SELECTED DRAWING: Figure 1 |
