Semiconductor device having a resistor and methods of forming the same

摘要

In a semiconductor device and a method of making the same, the semiconductor device comprises a substrate including a first region and a second region. At least one first gate structure is on the substrate in the first region, the at least one first gate structure including a first gate insulating layer and a first gate electrode layer on the first gate insulating layer. At least one isolating structure is in the substrate in the second region, a top surface of the isolating structure being lower in height than a top surface of the substrate. At least one resistor pattern is on the at least one isolating structure.

主权项

1. A method of forming a semiconductor device comprising:
providing a gate insulating layer on a substrate, the substrate having an upper surface; providing an isolating structure in the substrate; providing a first gate electrode layer on the gate insulating layer; removing a portion of the first gate electrode layer and a portion of the gate insulating layer to expose the isolating structure; removing an upper portion of the exposed isolating structure to recess the isolating structure in the substrate so that a top surface of the isolating structure is lower in height than the upper surface of the substrate; providing a second gate electrode layer on the recessed isolating structures; patterning the second gate electrode layer to form a resistor pattern on the recessed isolating structure; providing an insulating layer on the resistor pattern; and planarizing the insulating layer, wherein a portion of the insulating layer remains on the resistor pattern to cover the resistor pattern.