Contact structure of semiconductor device

摘要

A method of fabricating a semiconductor device comprises forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin. The method further comprises forming germanide over a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming a fin structure extending from a substrate, the fin structure comprising a first fin, a second fin, and a third fin between the first fin and the second fin; forming a dielectric layer over the fin structure; forming an opening in the dielectric layer to expose a first facet of the first fin, a second facet of the second fin, and a substantially planar surface of the third fin, wherein the first facet forms a first acute angle with a major surface of the substrate and is substantially mirror symmetric with the second facet, and wherein the substantially planar surface of the third fin forms a second acute angle smaller than the first acute angle with the major surface of the substrate; forming a first metal layer over the dielectric layer, the first facet, the second facet and the substantially planar surface; and after the forming the first metal layer, heating the substrate to form germanide over the first facet, the second facet and the substantially planar surface.