| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer thin-film processing control method of carrying out thin-film processing based upon the remaining size from a via bottom part in a wafer to a wafer grinding surface.SOLUTION: After a via for through electrode is formed in the wafer, the wafer is held on a chuck table of a processing device with the grinding surface of the wafer up, and a grinding wheel is pressed against the grinding surface of the wafer to perform grinding processing. In this grinding processing, the overall film thickness of the wafer is measured by NCIG to acquire film thickness data, and the size from the via bottom part to the wafer grinding surface is measured to acquire remaining size data. In finish grinding processing, remaining size data on the remaining size from the via bottom part to the wafer grinding surface is derived by reference to film thickness data on the whole wafer to perform the grinding processing up to right before the bottom part of the via. |
