发明名称 SOLID STATE IMAGE SENSOR, MANUFACTURING METHOD OF THE SAME, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To make it possible to reduce signal mixture caused by electric capacitance coupling between adjacent pixels.SOLUTION: The solid state image sensor includes pixels 2A, 2B, 2C, adjacently arranged. Each of the pixels includes: a photoelectric conversion film 52, for performing photoelectric conversion of incident light; and a lower part electrode 51 arranged therebelow. Between the lower part electrodes of individual pixels, inter-pixel electrodes 54 different from the lower part electrodes are included.SELECTED DRAWING: Figure 2
申请公布号 JP2016127264(A) 申请公布日期 2016.07.11
申请号 JP20150204246 申请日期 2015.10.16
申请人 SONY CORP 发明人 FUKUOKA SHIMPEI;MANDA SHUJI;HIRATA SHINTARO;YAMAGUCHI TETSUJI;KOGA FUMIHIKO
分类号 H01L27/146;H04N5/357;H04N5/369 主分类号 H01L27/146
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