| 发明名称 |
Semiconductor device with a cavity therein and a method of manufacturing the same |
| 摘要 |
A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.
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| 申请公布号 |
US7145215(B2) |
申请公布日期 |
2006.12.05 |
| 申请号 |
US20050315796 |
申请日期 |
2005.12.22 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
INOH KAZUMI;ISHIUCHI HIDEMI;MATSUDA SATOSHI;MIZUSHIMA ICHIRO;SATO TSUTOMU |
| 分类号 |
H01L29/00;H01L21/334;H01L21/76;H01L21/762;H01L21/764;H01L21/8242;H01L21/84;H01L27/02;H01L27/105;H01L27/108;H01L27/11;H01L27/115;H01L27/12;H01L27/22;H01L29/06;H01L29/786 |
主分类号 |
H01L29/00 |
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