| 摘要 |
Provided is a method for manufacturing an oxide using a sputtering apparatus including a target unit and a substrate holder. In the target unit, a first target and a second target are located with a predetermined space therebetween so that front surfaces thereof face each other. The substrate holder and a side of the target unit are located with a predetermined space therebetween. The method includes providing a substrate for the substrate holder, generating plasma including an ion between the first and the second targets by application of a potential therebetween, generating a sputtering particle including the oxide by a collision of the ion with the first and the second targets, and depositing the sputtering particle on the substrate while the target unit is moved in a direction parallel to a formation surface of the substrate. |
