发明名称 |
SYSTEMS AND METHODS OF FORMING AN INTERFACIAL DIPOLE LAYER |
摘要 |
A method of forming an electronic device includes forming an oxygen scavenging layer proximate to a dielectric layer in a gate region of a field effect transistor (FET). The interface layer is between the dielectric layer and a substrate of the FET. The method further includes forming a dipole layer by annealing the oxygen scavenging layer, the dielectric layer, and the interface layer. |
申请公布号 |
WO2016133677(A2) |
申请公布日期 |
2016.08.25 |
申请号 |
WO2016US15781 |
申请日期 |
2016.01.29 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
XU, Jeffrey Junhao;LI, Xia |
分类号 |
H01L27/115;G11C11/22;H01L21/28;H01L29/66 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|