| 发明名称 |
PEROVSKITE THIN FILMS HAVING LARGE CRYSTALLINE GRAINS |
| 摘要 |
The invention relates generally to perovskite materials, and in particular, to perovskite thin films having large crystalline grains. Methods of forming the perovskite thin films are disclosed herein. The perovskite thin films find particular use in photovoltaic applications. |
| 申请公布号 |
US2016254472(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615054280 |
申请日期 |
2016.02.26 |
| 申请人 |
NANYANG TECHNOLOGICAL UNIVERSITY |
发明人 |
WANG Ning;DEMIR Hilmi Volkan;SUN Xiaowei |
| 分类号 |
H01L51/42;H01L51/00 |
主分类号 |
H01L51/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a perovskite thin film having an ABX3 crystalline structure, wherein the crystalline structure comprises an average grain size of more than 1 micron, the method comprising:
forming via vacuum thermal evaporation a layer of a metal (II) halide (BX2) on a substrate; depositing via spin coating a solution of an organic halide or a metal (I) halide (AX) on the BX2 layer; and annealing the BX2 and AX layers to form the perovskite thin film, wherein A is CH3NH3+, CH3N2H2+, or Cs+, B is Pb2+, Sn2+, and X is Cl−, Br− or I−. |
| 地址 |
Singapore SG |
