| 发明名称 |
METHOD FOR STRIPPING MODIFIED RESIST, MODIFIED-RESIST STRIPPER USED THEREFOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR-SUBSTRATE PRODUCT |
| 摘要 |
Provided is a stripping method for stripping a modified resist from a semiconductor substrate by applying an etching solution to the semiconductor substrate, in which the etching solution contains an alcohol compound and a quaternary ammonium hydroxide compound and the quaternary ammonium hydroxide compound is at least one of tetraethylammonium hydroxide and tetrabutylammonium hydroxide. |
| 申请公布号 |
US2016254164(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615152620 |
申请日期 |
2016.05.12 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
SUGISHIMA Yasuo;KAMIMURA Tetsuya;MIZUTANI Atsushi |
| 分类号 |
H01L21/311;G03F7/42 |
主分类号 |
H01L21/311 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A stripping method comprising:
applying an etching solution to a semiconductor substrate to strip a modified resist on the semiconductor substrate, wherein the etching solution contains an alcohol compound and a quaternary ammonium hydroxide compound, and the quaternary ammonium hydroxide compound is at least one of tetraethylammonium hydroxide and tetrabutylammonium hydroxide. |
| 地址 |
Tokyo JP |
