| 发明名称 |
METHODS FOR FABRICATING SEMICONDUCTOR STRUCTURE WITH CONDENSED SILICON GERMANIUM LAYER |
| 摘要 |
Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure. |
| 申请公布号 |
US2016254145(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201514633246 |
申请日期 |
2015.02.27 |
| 申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
TRIYOSO Dina H.;TONG Wei Hua;SHI Haoran;WAHL Jeremy Austin;CHILD Amy Lynn |
| 分类号 |
H01L21/02;H01L21/225;H01L29/165;H01L29/16;H01L29/161 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper silicon region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure. |
| 地址 |
Grand Cayman KY |
