| 摘要 |
The invention relates to a method for production of a monolithic multilayer structure (20), for the interconnection of semiconductor cells (10), provided with co-planar contacts (16, 18) on the rear face. The method comprises the following steps: irradiation of the surface of one or more given regions (42, 44) of a electrically-insulating substrate wafer (24), containing photo- or thermo-reducible particles at the surface thereof (40), deposition of a continuous thin metal layer on said irradiated zones such as to form collector buses (28, 30), deposition of a thin encapsulating electrically-insulating layer (26) on the surface (40) of the substrate wafer (24) provided with collector buses (28, 30), piercing holes (32) through the encapsulation layer finishing on the collector buses in given locations, filling said holes with a metal to form connector pins (36) and deposition of a thermal soldering agent (34) on the connector pins. |
