发明名称 Method for making epitaxial structure
摘要 A method for making an epitaxial structure is provided. The method includes the following steps. A substrate having an epitaxial growth surface is provided. A carbon nanotube layer is placed on the epitaxial growth surface. An epitaxial layer is epitaxially grown on the buffer layer. The substrate and the carbon nanotube layer are removed to expose the epitaxial layer.
申请公布号 US9450142(B2) 申请公布日期 2016.09.20
申请号 US201514926610 申请日期 2015.10.29
申请人 Tsinghua University;HON HAI PRECISION INDUSTRY CO., LTD. 发明人 Wei Yang;Fan Shou-Shan
分类号 H01L21/20;H01L33/00 主分类号 H01L21/20
代理机构 代理人 Ma Zhigang
主权项 1. A method for making an epitaxial structure, the method comprising: providing a substrate having an epitaxial growth surface; forming a buffer layer on the epitaxial growth surface; placing a first carbon nanotube layer on the buffer layer; epitaxially growing a first epitaxial layer on the buffer layer; placing a second carbon nanotube layer on the first epitaxial layer; epitaxially growing a second epitaxial layer on the first epitaxial layer; and removing the substrate and the first carbon nanotube layer.
地址 Beijing CN