| 发明名称 | Semiconductor arrangements and methods of manufacturing the same | ||
| 摘要 | A semiconductor arrangement that includes: a substrate; a back gate formed on the substrate; fins formed on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective fins. The back gate has opposite end portions recessed with respect to a middle portion thereof between the end portions, so that an overlap area between each of the end portions and each of the fins is smaller than an overlap area between the middle portion and the fin. | ||
| 申请公布号 | US9450100(B2) | 申请公布日期 | 2016.09.20 |
| 申请号 | US201314763407 | 申请日期 | 2013.03.12 |
| 申请人 | Institute of Microelectronics, Chinese Academy of Sciences | 发明人 | Zhu Huilong |
| 分类号 | H01L29/66;H01L29/78;H01L21/8234;H01L27/088;H01L29/06;H01L29/423 | 主分类号 | H01L29/66 |
| 代理机构 | Christensen Fonder P.A. | 代理人 | Christensen Fonder P.A. |
| 主权项 | 1. A semiconductor arrangement, comprising: a substrate; a back gate formed on the substrate; fins formed on opposite sides of the back gate; and back gate dielectric layers interposed between the back gate and the respective fins, wherein the back gate has opposite end portions recessed with respect to a middle portion thereof between the end portions, so that an overlap area between each of the end portions and each of the fins is smaller than an overlap area between the middle portion and the fin. | ||
| 地址 | Beijing CN | ||