发明名称 |
Three dimensional NAND string memory devices and methods of fabrication thereof |
摘要 |
A method includes forming an amorphous or polycrystalline semiconductor material over at least a portion of a sidewall of a front side opening and within front side recesses in a stack of alternating first and second material layers, forming a layer of a metal material over at least a portion of the sidewall of the front side opening and adjacent to the semiconductor material within the front side recesses; annealing the metal material and the semiconductor material within the front side recesses to form a large grain polycrystalline or single crystal semiconductor material charge storage region within each of the front side recesses by a metal induced crystallization process, and forming a tunnel dielectric layer and semiconductor channel in the front side opening. Following the metal induced crystallization process, at least a portion of the metal material is located between the charge storage regions and the second material layers. |
申请公布号 |
US9449981(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201414520084 |
申请日期 |
2014.10.21 |
申请人 |
SANDISK TECHNOLOGIES LLC |
发明人 |
Pachamuthu Jayavel;Alsmeier Johann;Chien Henry |
分类号 |
H01L21/336;H01L27/115;H01L29/423;H01L29/49;H01L29/788;H01L21/311;H01L21/02;H01L21/285;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
The Marbury Law Group PLLC |
代理人 |
The Marbury Law Group PLLC |
主权项 |
1. A method of making a monolithic three dimensional NAND string, comprising:
forming a stack of alternating layers of a first material and a second material different than the first material over a substrate; etching the stack to form a front side opening in the stack having a sidewall defined at least partially by the alternating layers of the first material and the second material; removing a first portion of the second material layers through the front side opening to form front side recesses between the first material layers; forming an amorphous or polycrystalline semiconductor material over at least a portion of the sidewall of the front side opening and within the front side recesses; forming a layer of a metal material over at least a portion of the sidewall of the front side opening and adjacent to the amorphous or polycrystalline semiconductor material within the front side recesses; annealing the metal material and the amorphous or polycrystalline semiconductor material within the front side recesses to form a large grain polycrystalline or single crystal semiconductor material charge storage region within each of the front side recesses by a metal induced crystallization process, wherein following the metal induced crystallization process at least a portion of the metal material is located between the charge storage regions and the second material layers; forming a tunnel dielectric layer over the charge storage regions in the front side opening; and forming a semiconductor channel over the tunnel dielectric layer in the front side opening. |
地址 |
Plano TX US |