N-well/P-well strap structures

摘要

Embodiments of N-well or P-well strap structures are disclosed with lower requirements achieved by forming the strap on both sides of one or more floating polysilicon gate fingers.

主权项

1. An integrated circuit structure comprising:
an N-type or P-type well in a semiconductor substrate; a first active device formed in the well; a strap formed in the well and separated from the first active device, the strap comprising a diffusion region, a floating polysilicon finger, and first and second taps connecting to the diffusion region on opposite sides of the floating polysilicon finger; a single dummy polysilicon finger located on the well between the first active device and the strap; a second active device formed in the well on an opposite side of the strap from the first active device; and a second single dummy polysilicon finger located on the well between the second active device and the strap.