Devices, systems, and methods related to forming through-substrate vias with sacrificial plugs

摘要

Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming one or more openings in a front side of the semiconductor device and forming sacrificial plugs in the openings that partially fill the openings. The method further includes further filling the partially filled openings with a conductive material, where individual sacrificial plugs are generally between the conductive material and a substrate of the semiconductor device. The sacrificial plugs are exposed at a backside of the semiconductor device. Contact regions can be formed at the backside by removing the sacrificial plugs.

主权项

1. A semiconductor device comprising:
a substrate having an opening extending from a front side of the substrate to a backside of the substrate, wherein the opening includes a first portion at the front side and a second portion at the backside that has a different shape than the first portion of the opening; a through-substrate via that extends through the opening, wherein the thorough-substrate via includes—
a first conductive material extending through the opening at the front side of the substrate,a second conductive material extending through the opening at the backside of the substrate, andat least one barrier/seed material between the first conductive material and the second conductive material; and a conductive structure that includes the second conductive material, wherein the conductive structure includes a pillar or stand-off structure, wherein the first portion of the opening at least partially defines a first conductive structure that includes the first conductive material, and wherein the second portion of the opening at least partially defines a second conductive structure that includes the second conductive material.