Semiconductor device and formation thereof

摘要

A semiconductor device and method of formation are provided herein. A semiconductor device includes a first active region adjacent a first side of a shallow trench isolation (STI) region. The first active region including a first proximal fin having a first proximal fin height adjacent the STI region, and a first distal fin having a first distal fin height adjacent the first proximal fin, the first proximal fin height less than the first distal fin height. The STI region includes oxide, the oxide having an oxide volume, where the oxide volume is inversely proportional to the first proximal fin height. A method of formation includes forming a first proximal fin with a first proximal fin height less than a first distal fin height of a first distal fin, such that the first proximal fin is situated between the first distal fin and an STI region.

主权项

1. A method, comprising:
etching a substrate to define a set of fins; masking a top surface of a first subset of the set of fins; etching a second subset of the set of fins while the top surface of the first subset is masked to reduce a fin height of fins that are members of the second subset; etching a portion of the substrate between a first fin of the second subset and a second fin of the second subset to define a trench; forming a shallow trench isolation (STI) region within a first portion of the trench and a second portion of the trench; and depositing a conductive material within a third portion of the trench, over the first subset, and over the second subset to form a metal connect, wherein:
the third portion of the trench is between the first portion of the trench and the second portion of the trench, andthe metal connect is in contact with the first subset and the second subset.