发明名称 |
Energy storage device, method of manufacturing same, and mobile electronic device containing same |
摘要 |
An energy storage device comprises a first porous semiconducting structure (510) comprising a first plurality of channels (511) that contain a first electrolyte (514) and a second porous semiconducting structure (520) comprising a second plurality of channels (521) that contain a second electrolyte (524). In one embodiment, the energy storage device further comprises a film (535) on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions. In another embodiment, at least one of the first and second electrolytes contains a plurality of metal ions. In another embodiment, the first and second electrolytes, taken together, comprise a redox system. |
申请公布号 |
US9449765(B2) |
申请公布日期 |
2016.09.20 |
申请号 |
US201213977564 |
申请日期 |
2012.04.25 |
申请人 |
Intel Corporation |
发明人 |
Gardner Donald S.;Pint Cary;Clendenning Scott B. |
分类号 |
H01G11/02;H01G11/52;H01G11/26;H01G11/30;G06F1/16;H01G11/84;H04M1/02;H01G9/04;H01G11/46 |
主分类号 |
H01G11/02 |
代理机构 |
|
代理人 |
Nelson Kenneth A. |
主权项 |
1. An energy storage device comprising:
a first porous semiconducting structure comprising a first plurality of channels that contain a first electrolyte; a second porous semiconducting structure comprising a second plurality of channels that contain a second electrolyte, which is different from the first electrolyte; and a film on at least one of the first and second porous semiconducting structures, the film comprising a material capable of exhibiting reversible electron transfer reactions; wherein: the first and second electrolytes, taken together, comprise a redox system. |
地址 |
Santa Clara CA US |