Method of producing GaAs single crystal and GaAs single crystal wafer

摘要

A method of producing a GaAs single crystal having high carrier concentration and high crystallinity and to provide a GaAs single crystal wafer using such a GaAs single crystal. In the method of producing a GaAs single crystal, a vertical boat method is performed with a crucible receiving a seed crystal, a Si material, a GaAs material serving as an impurity, solid silicon dioxide, and a boron oxide material, thereby growing a GaAs single crystal.

主权项

1. A method of producing a GaAs single crystal, wherein a vertical boat method is performed with a crucible storing a seed crystal, a Si material serving as an impurity, a GaAs material, a solid silicon dioxide, and a boron oxide material in which SiO2 is previously added into the boron oxide material, thereby growing a GaAs single crystal,
wherein the solid silicon dioxide is in a disk shape and is provided between the GaAs material and the boron oxide material, a ratio of an area of the solid silicon dioxide to an area of the upper surface of the GaAs material at a start of crystal growth is 90% to 99%, an amount of Si of SiO2 previously added into the boron oxide material is 5 mass % or less, and a sum of an amount of Si of SiO2 in the boron oxide material and an amount of Si in the solid silicon dioxide exceeds 5 mass % of the boron oxide material.